| Author: |
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Kevin D. Greene
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| Title: |
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Electron Paramagnetic Resonance Spectroscopy and Hall Effect Studies of the Effects of Low Energy Electron Irradiation on Gallium Nitride |
| Moochable copies: |
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No copies available |
| Topics: |
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| Published in: |
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English |
| Binding: |
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Spiral-bound |
| Pages: |
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186 |
| Date: |
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2003 |
| ISBN: |
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1423514521 |
| Publisher: |
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Storming Media |
Amazon prices: |
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| Description: |
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Product Description
This is a AIR FORCE INST OF TECH WRIGHT-PATTERSONAFB OH report procured by the Pentagon and made available for public release. It has been reproduced in the best form available to the Pentagon. It is not spiral-bound, but rather assembled with Velobinding in a soft, white linen cover. The Storming Media report number is A618024. The abstract provided by the Pentagon follows: The nature of native donors in GaN, types and interactions of radiation-induced defects, and damage creation coefficients for 1.0 MeV electron irradiation have been ascertained by the concerted application of electron paramagnetic resonance spectroscopy and Hall effect measurements to virgin and electron-irradiated GaN epilayers. Samples produced via molecular beam epitaxy and hydride vapor phase epitaxy, both silicon doped and nominally undoped, were subjected to Van de Graff generator produced monoenergtic electron beams with total fluences of 10^16- 10^18 electrons/cm^2. Nitrogen vacancies are rejected as a possible cause of n-type conductivity in nominally undoped GaN due to the decrease of shallow donor populations following irradiation. Damage constants for a donor-defect complex formation or defect compensation are found to be approximately 0.15 cm^-1. Identification by resolved hyperfine splitting is accomplished for radiation-induced Ga interstitial complexes.
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| URL: |
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http://bookmooch.com/1423514521 |
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