T. S. Moss : Progress in Quantum Electronics, No 3, 1984: Properties of Doped Silicon and Germanium Infrared Detectors (3rd of 4 Pts)
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Author:
T. S. Moss
Title:
Progress in Quantum Electronics, No 3, 1984: Properties of Doped Silicon and Germanium Infrared Detectors (3rd of 4 Pts)
Moochable copies:
No copies available
Topics:
Electromagnetism
Physics
Professional & Technical
Professional Science
Refinements
Science
Trade
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Published in:
English
Binding:
Paperback
Pages:
Date:
1985-06
ASIN/ISBN:
0080331912
Publisher:
Pergamon Pr
URL:
http://bookmooch.com/0080331912
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