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T. S. Moss : Progress in Quantum Electronics, No 3, 1984: Properties of Doped Silicon and Germanium Infrared Detectors (3rd of 4 Pts)
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Author: T. S. Moss
Title: Progress in Quantum Electronics, No 3, 1984: Properties of Doped Silicon and Germanium Infrared Detectors (3rd of 4 Pts)
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Published in: English
Binding: Paperback
Pages:
Date: 1985-06
ASIN/ISBN: 0080331912
Publisher: Pergamon Pr
URL: http://bookmooch.com/0080331912

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